| PART |
Description |
Maker |
| HYB25D256800BTL-5A HYB25D256160BT-5A HYB25D256800B |
256MBit Double Data Rata SDRAM 256Mbit SDRAM的双倍数据拉
|
Infineon Technologies AG
Infineon Technologies A...
|
| IDT72V70180PF |
3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 128 x 128 3.3V Power Supply
|
Integrated Device Technology
|
| DS2760TA-025 DS2760T-025 DS2760EA-025 DS2760XA-025 |
High Precision Li-Ion Battery Monitor
1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO16
128 x 128 pixel format, LED or EL Backlight available
122 x 32 pixel format, LED or EL Backlight available
|
http://
DALLAS SEMICONDUCTOR
|
| M69KB128AA70AW8 M69KB128AA70CW8 M69KB128AA70DW8 M6 |
128 Mbit (8Mb x16) 1.8V Supply, Burst PSRAM
|
STMicroelectronics
|
| M58LR128KB855 M58LR128KB M58LR128KT M58LR128KT855 |
128 or 256 Mbit (隆驴16, multiple bank, multilevel interface, burst) 1.8 V supply Flash memories
128 or 256 Mbit (×16, multiple bank, multilevel interface, burst) 1.8 V supply Flash memories
|
Numonyx B.V
|
| M29W128FL60N6E M29W128FL60N6F M29W128FL70ZA6E M29W |
128 Mbit (8Mb x 16 or 16Mb x 8, Page, Uniform Block) 3V Supply Flash Memory
|
Numonyx B.V
|
| M58LT128HST8ZA6F M58LT128HSB M58LT128HST M58LT128H |
128-Mbit (8 Mb 】16, Multiple Bank, Multilevel interface, Burst) 1.8 V supply, Secure Flash memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| K4J55323QF-GC15 K4J55323QF-GC14 K4J55323QF-GC16 K4 |
256Mbit GDDR3 SDRAM
|
Samsung Electronic
|
| K4J55323QF-GC14 K4J55323QF-GC16 K4J55323QF-GC15 K4 |
256Mbit GDDR3 SDRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M30LW128D M30LW128D110N1T M30LW128D110N6T M30LW128 |
128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product
|
ST Microelectronics
意法半导
|
